FDT457N

Technical Details

• Vgs(th) (Max) @ Id:3V @ 250µA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223-4
• Mounting Type:Surface Mount
• Operating Temperature:-65°C ~ 150°C (TJ)
• Power Dissipation (Max):3W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:235pF @ 15V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:5.9nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:60 mOhm @ 5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)