FDWS86369-F085 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:8-PowerTDFN
• Supplier Device Package:Power56
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):107W (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2470pF @ 40V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V

• Series:Automotive, AEC-Q101, PowerTrench®
• Rds On (Max) @ Id, Vgs:7.5 mOhm @ 65A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:65A (Tc)
• Drain to Source Voltage (Vdss):80V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)