FDZ3N513ZT Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Package / Case:4-UFBGA, WLCSP
• Supplier Device Package:4-WLCSP (1x1)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 125°C (TJ)
• Power Dissipation (Max):1W (Ta)
• FET Feature:Schottky Diode (Body)
• Input Capacitance (Ciss) (Max) @ Vds:85pF @ 15V
• Vgs (Max):+5.5V, -0.3V
• Gate Charge (Qg) (Max) @ Vgs:1nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:462 mOhm @ 300mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):3.2V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)