FF650R17IE4DB2BOSA1

Technical Details

• Series:--
• Part Status:Active
• IGBT Type:--
• Configuration:2 Independent
• Voltage - Collector Emitter Breakdown (Max):1700V
• Power - Max:4150W
• Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 650A
• Current - Collector Cutoff (Max):5mA

• Input Capacitance (Cies) @ Vce:54nF @ 25V
• Input:Standard
• NTC Thermistor:Yes
• Operating Temperature:-40°C ~ 150°C
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module