FMM150-0075X2F

Technical Details

• Series:HiPerFET™, TrenchT2™
• Packaging:Tube 
• Part Status:Active
• FET Type:2 N-Channel (Dual) Asymmetrical
• FET Feature:Standard
• Drain to Source Voltage (Vdss):75V
• Current - Continuous Drain (Id) @ 25°C:120A
• Rds On (Max) @ Id, Vgs:5.8 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:178nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:10500pF @ 25V
• Power - Max:170W
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Package / Case:ISOPLUSi5-Pak™
• Supplier Device Package:ISOPLUS i4-PAC™