FQA47P06

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-3P-3, SC-65-3
• Supplier Device Package:TO-3PN
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):214W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3600pF @ 25V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V

• Series:QFET®
• Rds On (Max) @ Id, Vgs:26 mOhm @ 27.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:55A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tube