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FQAF13N80

ON Semiconductor
FQAF13N80 HongDa Electronics FQAF13N80
  • Manufacturer Part# FQAF13N80
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 800V 8A TO-3PF
  • More DetailN-Channel 800V 8A (Tc) 120W (Tc) Through Hole TO-3...
In Stock: 360

Can ship immediately

Datasheet:
FQAF13N80 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:SC-94
  • Supplier Device Package:TO-3PF
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):120W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3500pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:88nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:750 mOhm @ 4A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drain to Source Voltage (Vdss):800V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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