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FQB19N10TM

ON Semiconductor
FQB19N10TM HongDa Electronics FQB19N10TM
  • Manufacturer Part# FQB19N10TM
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 19A D2PAK
  • More DetailN-Channel 100V 19A (Tc) 3.75W (Ta), 75W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
FQB19N10TM Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK (TO-263AB)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3.75W (Ta), 75W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:780pF @ 25V
  • Vgs (Max):±25V
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:100 mOhm @ 9.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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