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FQB34P10TM-F085P

ON Semiconductor
FQB34P10TM-F085P HongDa Electronics FQB34P10TM-F085P
  • Manufacturer Part# FQB34P10TM-F085P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionPMOS D2PAK 100V 60 MOHM
  • More DetailP-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Su...
In Stock: 1000

Can ship immediately

Datasheet:
FQB34P10TM-F085P Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK (TO-263)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3.75W (Ta), 155W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2910pF @ 25V
  • Vgs (Max):±25V
  • Series:--

 

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Rds On (Max) @ Id, Vgs:60 mOhm @ 16.75A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active

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