FQB8N60CTM-WS Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D²PAK (TO-263AB)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):3.13W (Ta), 147W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1255pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V

• Series:QFET®
• Rds On (Max) @ Id, Vgs:1.2 Ohm @ 3.75A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)