• Manufacturer Part# FQD12N20LTM-F085P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionNMOS DPAK 200V 280 MOHM
  • More DetailN-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface...
In Stock: 1000

Can ship immediately

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:21nC @ 5V
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252, (D-Pak)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 55W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1080pF @ 25V
  • Vgs (Max):±20V
  • Series:QFET®

 

  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Rds On (Max) @ Id, Vgs:280 mOhm @ 4.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs

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