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FQD5N20LTM Discrete Semiconductor Products

ON Semiconductor
FQD5N20LTM HongDa Electronics FQD5N20LTM
  • Manufacturer Part# FQD5N20LTM
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 3.8A DPAK
  • More DetailN-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
FQD5N20LTM Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:D-Pak
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 37W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:325pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 5V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:1.2 Ohm @ 1.9A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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