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FQI12N50TU

ON Semiconductor
FQI12N50TU HongDa Electronics FQI12N50TU
  • Manufacturer Part# FQI12N50TU
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 500V 12.1A I2PAK
  • More DetailN-Channel 500V 12.1A (Tc) 3.13W (Ta), 179W (Tc) Th...
In Stock: 1000

Can ship immediately

Datasheet:
FQI12N50TU Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:I2PAK (TO-262)
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.13W (Ta), 179W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2020pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:490 mOhm @ 6.05A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:12.1A (Tc)
  • Drain to Source Voltage (Vdss):500V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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