FQI4N80TU

Technical Details

• Vgs(th) (Max) @ Id:5V @ 250µA
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package:I2PAK (TO-262)
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):3.13W (Ta), 130W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:880pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V

• Series:QFET®
• Rds On (Max) @ Id, Vgs:3.6 Ohm @ 1.95A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
• Drain to Source Voltage (Vdss):800V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube