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FQP34N20

ON Semiconductor
FQP34N20 HongDa Electronics FQP34N20
  • Manufacturer Part# FQP34N20
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 31A TO-220
  • More DetailN-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-...
In Stock: 904

Can ship immediately

Datasheet:
FQP34N20 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):180W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:75 mOhm @ 15.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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