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FQPF10N60C_F105

ON Semiconductor
FQPF10N60C_F105 HongDa Electronics FQPF10N60C_F105
  • Manufacturer Part# FQPF10N60C_F105
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIC POWER MANAGEMENT
  • More DetailN-Channel 600V 9.5A (Tc) 50W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
FQPF10N60C_F105 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):50W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2040pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:730 mOhm @ 4.75A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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