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FQPF1N60

ON Semiconductor
FQPF1N60 HongDa Electronics FQPF1N60
  • Manufacturer Part# FQPF1N60
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 0.9A TO-220F
  • More DetailN-Channel 600V 900mA (Tc) 21W (Tc) Through Hole TO...
In Stock: 1000

Can ship immediately

Datasheet:
FQPF1N60 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):21W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:150pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:11.5 Ohm @ 450mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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