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FQPF33N10

ON Semiconductor
FQPF33N10 HongDa Electronics FQPF33N10
  • Manufacturer Part# FQPF33N10
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 18A TO-220F
  • More DetailN-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-2...
In Stock: 20

Can ship immediately

Datasheet:
FQPF33N10 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):41W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 25V
  • Vgs (Max):±25V
  • Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:52 mOhm @ 9A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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