FQT1N80TF-WS

Technical Details

• Vgs(th) (Max) @ Id:5V @ 250µA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223-3
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.1W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:195pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:7.2nC @ 10V

• Series:QFET®
• Rds On (Max) @ Id, Vgs:20 Ohm @ 100mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
• Drain to Source Voltage (Vdss):800V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)