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FQU1N60CTU

ON Semiconductor
FQU1N60CTU HongDa Electronics FQU1N60CTU
  • Manufacturer Part# FQU1N60CTU
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 1A IPAK
  • More DetailN-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through...
In Stock: 2223

Can ship immediately

Datasheet:
FQU1N60CTU Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 28W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:170pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 10V

 

  • Series:QFET®
  • Rds On (Max) @ Id, Vgs:11.5 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:1A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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