GA06JT12-247

Technical Details

• Rds On (Max) @ Id, Vgs:220 mOhm @ 6A
• Package / Case:TO-247-3
• Supplier Device Package:TO-247AB
• Mounting Type:Through Hole
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):--
• FET Feature:--
• Vgs (Max):--
• Vgs(th) (Max) @ Id:--

• Series:--
• Drive Voltage (Max Rds On, Min Rds On):--
• Current - Continuous Drain (Id) @ 25°C:6A (Tc) (90°C)
• Drain to Source Voltage (Vdss):1200V
• Technology:SiC (Silicon Carbide Junction Transistor)
• FET Type:--
• Part Status:Obsolete
• Packaging:Tube