GA08JT17-247

Technical Details

• Rds On (Max) @ Id, Vgs:250 mOhm @ 8A
• Package / Case:TO-247-3
• Supplier Device Package:TO-247AB
• Mounting Type:Through Hole
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):48W (Tc)
• FET Feature:--
• Vgs (Max):--
• Vgs(th) (Max) @ Id:--

• Series:--
• Drive Voltage (Max Rds On, Min Rds On):--
• Current - Continuous Drain (Id) @ 25°C:8A (Tc) (90°C)
• Drain to Source Voltage (Vdss):1700V
• Technology:SiC (Silicon Carbide Junction Transistor)
• FET Type:--
• Part Status:Active
• Packaging:Tube