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GA20JT12-263

GeneSiC Semiconductor
GA20JT12-263 HongDa Electronics GA20JT12-263
  • Manufacturer Part# GA20JT12-263
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS SJT 1200V 45A
  • More Detail1200V 45A (Tc) 282W (Tc) Surface Mount D2PAK (7-Le...
In Stock: 254

Can ship immediately

Datasheet:
GA20JT12-263 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:--
  • Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Supplier Device Package:D2PAK (7-Lead)
  • Mounting Type:Surface Mount
  • Operating Temperature:175°C (TJ)
  • Power Dissipation (Max):282W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3091pF @ 800V
  • Vgs (Max):--
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:60 mOhm @ 20A
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • FET Type:--
  • Part Status:Active
  • Packaging:Tube 

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