GA50JT06-258

Technical Details

• Rds On (Max) @ Id, Vgs:25 mOhm @ 50A
• Package / Case:TO-258-3, TO-258AA
• Supplier Device Package:TO-258
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 225°C (TJ)
• Power Dissipation (Max):769W (Tc)
• FET Feature:--
• Vgs (Max):--
• Vgs(th) (Max) @ Id:--

• Series:--
• Drive Voltage (Max Rds On, Min Rds On):--
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:SiC (Silicon Carbide Junction Transistor)
• FET Type:--
• Part Status:Active
• Packaging:Bulk