• Manufacturer Part# GAL16V8D-10LPN
  • Product CategoryIntegrated Circuits (ICs)
  • Short DescriptionIC CPLD 8MC 10NS 20DIP
  • More DetailN/A
In Stock: 1000

Can ship immediately

Technical Details

  • Series:GAL®16V8
  • Packaging:Bulk 
  • Part Status:Obsolete
  • Programmable Type:EE PLD
  • Delay Time tpd(1) Max:10.0ns
  • Voltage Supply - Internal:4.75 V ~ 5.25 V
  • Number of Logic Elements/Blocks:--
  • Number of Macrocells:8

 

  • Number of Gates:--
  • Number of I/O:--
  • Operating Temperature:0°C ~ 75°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:20-DIP (0.300", 7.62mm)
  • Supplier Device Package:20-PDIP
  • Base Part Number:GAL16V8

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Description

The GAL16V8D-10LPN, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently. The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configurations possible with the GAL16V8 are the PAL architectures listed in the table of the macrocell description section. GAL16V8 devices are capable of emulating any of these PAL architectures with full function/fuse map/parametric compatibility. Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.

2. Features

    1. HIGH PERFORMANCE E2CMOS® TECHNOLOGY

        — 3.5 ns Maximum Propagation Delay

        — Fmax = 250 MHz

        — 3.0 ns Maximum from Clock Input to Data Output

        — UltraMOS® Advanced CMOS Technology

    2. 50% to 75% REDUCTION IN POWER FROM BIPOLAR

        — 75mA Typ Icc on Low Power Device

        — 45mA Typ Icc on Quarter Power Device

    3. ACTIVE PULL-UPS ON ALL PINS

    4. E2 CELL TECHNOLOGY

        — Reconfigurable Logic

        — Reprogrammable Cells

        — 100% Tested/100% Yields

        — High Speed Electrical Erasure (<100ms)

        — 20 Year Data Retention

    5. EIGHT OUTPUT LOGIC MACROCELLS

        — Maximum Flexibility for Complex Logic Designs

        — Programmable Output Polarity  

        — Also Emulates 20-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility

    6. PRELOAD AND POWER-ON RESET OF ALL REGISTERS

        — 100% Functional Testability

    7. APPLICATIONS INCLUDE:

        — DMA Control

        — State Machine Control

        — High Speed Graphics Processing

        — Standard Logic Speed Upgrade

    8. ELECTRONIC SIGNATURE FOR IDENTIFICATION

    9. LEAD-FREE PACKAGE OPTIONS

3. Pin configuration

          image.png


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