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GP2M002A060PG

Global Power Technologies Group
GP2M002A060PG HongDa Electronics GP2M002A060PG
  • Manufacturer Part# GP2M002A060PG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 2A
  • More DetailN-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole I-P...
In Stock: 1000

Can ship immediately

Datasheet:
GP2M002A060PG Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):52.1W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:360pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:4 Ohm @ 1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:2A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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