GPA025A120MN-ND Discrete Semiconductor Products

Technical Details

• Power - Max:312W
• Supplier Device Package:TO-3PN
• Package / Case:TO-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Reverse Recovery Time (trr):480ns
• Test Condition:600V, 25A, 10 Ohm, 15V
• Td (on/off) @ 25°C:57ns/240ns
• Gate Charge:350nC
• Input Type:Standard
• Switching Energy:4.15mJ (on), 870µJ (off)

• Series:--
• Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 25A
• Current - Collector Pulsed (Icm):75A
• Current - Collector (Ic) (Max):50A
• Voltage - Collector Emitter Breakdown (Max):1200V
• IGBT Type:NPT and Trench
• Moisture Sensitivity Level (MSL):--
• Part Status:Active
• Lead Free Status / RoHS Status:--
• Packaging:Tube