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GT60N321(Q)

Toshiba Semiconductor and Storage
GT60N321(Q) HongDa Electronics GT60N321(Q)
  • Manufacturer Part# GT60N321(Q)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIGBT 1000V 60A 170W TO3P LH
  • More DetailIGBT 1000V 60A 170W Through Hole TO-3P(LH)
  • Moisture Sensitivity Level (MSL)1 (Unlimited)
  • Lead Free Status / RoHS StatusLead free / RoHS Compliant
In Stock: 1000

Can ship immediately

Datasheet:
GT60N321(Q) Datasheet

Technical Details

  • Power - Max:170W
  • Base Part Number:GT60
  • Supplier Device Package:TO-3P(LH)
  • Package / Case:TO-3PL
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Reverse Recovery Time (trr):2.5µs
  • Test Condition:--
  • Td (on/off) @ 25°C:330ns/700ns
  • Input Type:Standard
  • Switching Energy:--

 

  • Series:--
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
  • Current - Collector Pulsed (Icm):120A
  • Current - Collector (Ic) (Max):60A
  • Voltage - Collector Emitter Breakdown (Max):1000V
  • IGBT Type:--
  • Moisture Sensitivity Level (MSL):--
  • Part Status:Obsolete
  • Lead Free Status / RoHS Status:--
  • Packaging:Tube 

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