HBDM60V600W-7 Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:NPN, PNP
• Current - Collector (Ic) (Max):500mA, 600mA
• Voltage - Collector Emitter Breakdown (Max):65V, 60V
• Vce Saturation (Max) @ Ib, Ic:400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max):100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V / 100 @ 150mA, 10V

• Power - Max:200mW
• Frequency - Transition:100MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:SOT-363
• Base Part Number:HBDM60V600