HCT7000MTX

Technical Details

• Vgs(th) (Max) @ Id:3V @ 1mA
• Package / Case:3-SMD, No Lead
• Supplier Device Package:3-SMD
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):300mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:60pF @ 25V
• Vgs (Max):±40V
• Series:--

• Rds On (Max) @ Id, Vgs:5 Ohm @ 500mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Bulk