HCT802TX

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):90V
• Current - Continuous Drain (Id) @ 25°C:2A, 1.1A
• Rds On (Max) @ Id, Vgs:5 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:--
• Input Capacitance (Ciss) (Max) @ Vds:70pF @ 25V
• Power - Max:500mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-SMD, No Lead
• Supplier Device Package:6-SMD