HN4C51J(TE85L,F) Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:2 NPN (Dual) Common Base
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):120V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
• Power - Max:300mW
• Frequency - Transition:100MHz
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SC-74A, SOT-753
• Supplier Device Package:SMV