HS54095TZ-E

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:TO-226-3, TO-92-3 Short Body
• Supplier Device Package:TO-92-3
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):750mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:66pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:4.8nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:16.5 Ohm @ 100mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)