HS8K11TB

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:7A, 11A
• Rds On (Max) @ Id, Vgs:17.9 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:11.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:500pF @ 15V
• Power - Max:2W
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-UDFN Exposed Pad
• Supplier Device Package:HSML3030L10