HTMN5130SSD-13

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):55V
• Current - Continuous Drain (Id) @ 25°C:2.6A
• Rds On (Max) @ Id, Vgs:130 mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:8.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:218.7pF @ 25V
• Power - Max:1.7W
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO