HTNFET-DC

Technical Details

• Vgs(th) (Max) @ Id:2.4V @ 100µA
• Package / Case:8-CDIP Exposed Pad
• Supplier Device Package:--
• Mounting Type:Through Hole
• Operating Temperature:--
• Power Dissipation (Max):50W (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:290pF @ 28V
• Vgs (Max):10V
• Gate Charge (Qg) (Max) @ Vgs:4.3nC @ 5V

• Series:HTMOS™
• Rds On (Max) @ Id, Vgs:400 mOhm @ 100mA, 5V
• Drive Voltage (Max Rds On, Min Rds On):5V
• Current - Continuous Drain (Id) @ 25°C:--
• Drain to Source Voltage (Vdss):55V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube