IMD10AMT1G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max):500mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Resistor - Base (R1):13 kOhms, 130 Ohms
• Resistor - Emitter Base (R2):10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V / 68 @ 100mA, 5V

• Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:--
• Power - Max:285mW
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:SC-74R