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IPA180N10N3GXKSA1

Infineon Technologies
IPA180N10N3GXKSA1 HongDa Electronics IPA180N10N3GXKSA1
  • Manufacturer Part# IPA180N10N3GXKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 28A TO220-FP
  • More DetailN-Channel 100V 28A (Tc) 30W (Tc) Through Hole PG-T...
In Stock: 1000

Can ship immediately

Datasheet:
IPA180N10N3GXKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 35µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:PG-TO220FP
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):30W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:18 mOhm @ 28A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:28A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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