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IPB017N06N3GATMA1

Infineon Technologies
IPB017N06N3GATMA1 HongDa Electronics IPB017N06N3GATMA1
  • Manufacturer Part# IPB017N06N3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 180A TO263-7
  • More DetailN-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPB017N06N3GATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 196µA
  • Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
  • Supplier Device Package:PG-TO263-7
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):250W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:275nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:1.7 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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