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IPB80N06S4L07ATMA1

Infineon Technologies
IPB80N06S4L07ATMA1 HongDa Electronics IPB80N06S4L07ATMA1
  • Manufacturer Part# IPB80N06S4L07ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 80A TO263-3
  • More DetailN-Channel 60V 80A (Tc) 79W (Tc) Surface Mount PG-T...
In Stock: 1000

Can ship immediately

Datasheet:
IPB80N06S4L07ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 40µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3-2
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):79W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:5680pF @ 25V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:6.4 mOhm @ 80A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Discontinued at Digi-Key
  • Packaging:Tape & Reel (TR) 

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