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IPD082N10N3GATMA1

Infineon Technologies
IPD082N10N3GATMA1 HongDa Electronics IPD082N10N3GATMA1
  • Manufacturer Part# IPD082N10N3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 80A TO252-3
  • More DetailN-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPD082N10N3GATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 75µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):125W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3980pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:8.2 mOhm @ 73A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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