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IPI110N20N3GAKSA1

Infineon Technologies
IPI110N20N3GAKSA1 HongDa Electronics IPI110N20N3GAKSA1
  • Manufacturer Part# IPI110N20N3GAKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 88A TO262-3
  • More DetailN-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPI110N20N3GAKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 270µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):300W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:7100pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:87nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:11 mOhm @ 88A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:88A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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