IPI50R299CPXKSA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 440µA
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package:PG-TO262-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):104W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1190pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V

• Series:CoolMOS™
• Rds On (Max) @ Id, Vgs:299 mOhm @ 6.6A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:12A (Tc)
• Drain to Source Voltage (Vdss):500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube