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IPI80P04P4L04AKSA1

Infineon Technologies
IPI80P04P4L04AKSA1 HongDa Electronics IPI80P04P4L04AKSA1
  • Manufacturer Part# IPI80P04P4L04AKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH TO262-3
  • More DetailP-Channel 40V 80A (Tc) 125W (Tc) Through Hole PG-T...
In Stock: 1000

Can ship immediately

Datasheet:
IPI80P04P4L04AKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):125W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3800pF @ 25V
  • Vgs (Max):+5V, -16V
  • Gate Charge (Qg) (Max) @ Vgs:176nC @ 10V

 

  • Series:Automotive, AEC-Q101, OptiMOS™
  • Rds On (Max) @ Id, Vgs:4.7 mOhm @ 80A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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