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IPL65R650C6SATMA1

Infineon Technologies
IPL65R650C6SATMA1 HongDa Electronics IPL65R650C6SATMA1
  • Manufacturer Part# IPL65R650C6SATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 8TSON
  • More DetailN-Channel 650V 6.7A (Tc) 56.8W (Tc) Surface Mount ...
In Stock: 1000

Can ship immediately

Datasheet:
IPL65R650C6SATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 210µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Thin-PAK (5x6)
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):56.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:440pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V

 

  • Series:CoolMOS™ C6
  • Rds On (Max) @ Id, Vgs:650 mOhm @ 2.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6.7A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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