IPN80R2K4P7ATMA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 40µA
• Package / Case:SOT-223-3
• Supplier Device Package:PG-SOT223
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):6.3W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:150pF @ 500V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 10V

• Series:CoolMOS™ P7
• Rds On (Max) @ Id, Vgs:2.4 Ohm @ 800mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
• Drain to Source Voltage (Vdss):800V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)