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IPP60R090CFD7XKSA1

Infineon Technologies
IPP60R090CFD7XKSA1 HongDa Electronics IPP60R090CFD7XKSA1
  • Manufacturer Part# IPP60R090CFD7XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionHIGH POWER_NEW
  • More DetailN-Channel 600V 25A (Tc) 125W (Tc) Through Hole PG-...
In Stock: 478

Can ship immediately

Datasheet:
IPP60R090CFD7XKSA1 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):125W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2103pF @ 400V
  • Vgs (Max):±20V
  • Series:OptiMOS™

 

  • Vgs(th) (Max) @ Id:4.5V @ 570µA
  • Rds On (Max) @ Id, Vgs:90 mOhm @ 11.4A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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