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IPP65R125C7XKSA1

Infineon Technologies
IPP65R125C7XKSA1 HongDa Electronics IPP65R125C7XKSA1
  • Manufacturer Part# IPP65R125C7XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 18A TO220
  • More DetailN-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-...
In Stock: 289

Can ship immediately

Datasheet:
IPP65R125C7XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 440µA
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):101W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1670pF @ 400V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V

 

  • Series:CoolMOS™ C7
  • Rds On (Max) @ Id, Vgs:125 mOhm @ 8.9A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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