IPU50R3K0CEBKMA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 30µA
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package:PG-TO251-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):18W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:84pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:4.3nC @ 10V

• Series:CoolMOS™ CE
• Rds On (Max) @ Id, Vgs:3 Ohm @ 400mA, 13V
• Drive Voltage (Max Rds On, Min Rds On):13V
• Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
• Drain to Source Voltage (Vdss):500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Last Time Buy
• Packaging:Tube