IPZ60R099C7XKSA1

Technical Details

• Vgs(th) (Max) @ Id:4V @ 490µA
• Package / Case:TO-247-4
• Supplier Device Package:PG-TO247-4
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):110W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1819pF @ 400V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V

• Series:CoolMOS™ C7
• Rds On (Max) @ Id, Vgs:99 mOhm @ 9.7A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:22A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube